国家/地区 中国（4）
IPC部 B（4）
IPC大类 B32（4）
IPC小类 B32B（4）
IPC B32B043/00（4）
发明人 LI Y（2）
公开年 2012（2）
申请年 2012（2） 
专利权人

Preparing graphene/metal composite material useful for high speed train insulated gate bipolar transistor packaging comprises e.g. preparing graphene oxide dispersion, coating layer of metal boron and titanium on surface of graphene film.

CHU K, WANG F, HUANG D, LI Y

Manufacturing method of coated article with graphene-inclusive thin film, involves mechanically removing graphene on major surface of nickel layer and graphene initially formed at interface of silicon layer and nickel layer.

VEERASAMY V S, VEERASAMY V

Method for non-destructively transferring graphene, involves nondestructively combining graphene coated with media with target substrate, and removing media to transfer graphene to target substrate nondestructively.

REN W, GAO L, MA L, CHENG H

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H