国家/地区 韩国（5）
IPC部 B（5）
IPC大类 B32（5）
IPC小类 B32B（5）
IPC B32B009/00（3） C01B031/04（3） C23C016/26（3）
B32B037/00（2） C01B032/184（2） C01B032/186（2）
C01B032/194（2） C23C014/34（2）
发明人
公开年 2016（5）
申请年 2015（3）  2016（2） 
专利权人

Producing metal-graphene thermally conductive film, comprises forming a graphene film, and forming a composite film.

ZHANG X

Graphene film manufacturing device comprises wrinkles flattening device, base substrate, graphene film, porous adsorption member, hollow space and vacuum suction port.

WAN S K, HEE H J, HEE H B, KIM W S, HAN J H, HONG B H

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

Method for manufacturing conductive material in lubricant, involves attaching substrate layer to graphene layer, and providing second conductive material with substrate layer which is attached to graphene layer.

TREOSSI E, SCIDA A, PALERMO V, KHAN M A, SCIDAE A