国家/地区 美国（11）
IPC部 B（11）
IPC大类 B32（11）
IPC小类 B32B（11）
IPC C01B031/04（10） B82Y040/00（9） B82Y030/00（7）
C23C016/26（7） C01B031/02（6） B32B009/04（4）
B32B009/00（3） C01B031/00（3） C23C016/02（3）
B32B033/00（2） C01B032/186（2） C23C016/01（2）
C23C016/48（2） C23C016/56（2） H01B001/04（2）
发明人
公开年 2012（6） 2011（3） 2013（2）
申请年 2011（11）
专利权人 EMPIRE TECHN.（3） INT BUSINESS.（2）

Formation of patterned graphene layer on substrate used for low-noise amplifier, involves forming patterned structure(s) of carbide-forming metal or metal-containing alloy on substrate, applying layer of graphene and heating.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K, AFZALIARDAKANI A C O I

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Ribbon of graphene, useful in FET structure and three/two terminal device structure, where ribbon of graphene provided with surface and arm chair edges is in physical contact with surface of single crystal substrate.

DIMITRAKOPOULOS C

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Producing graphene, comprises fixing seed crystal to support substrate, providing feedstock adjacent to seed crystal about the location, and applying laser beam to heat portion of seed crystal and portion of feedstock.

HAUCK J P

Graphene coated sheet for surface-treated steel plate used in e.g. car material, has graphene layer that is formed on steel sheet structure.

HWANG C C, JUNG Y G, HWANG H N, JEONG J I, YANG J H, JUNG Y, JEONG J, YANG J, HWANG H, HWANG C, GUK H C, IN J J, HUN Y J, GYUN J Y, NA H H

Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.

CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U

Electromagnetic interference shielding method for electronic/electrical machinery and apparatus e.g. TV, involves forming graphene on outer side portion or inner side portion of graphene growth supporter by using chemical deposition process.

BAE S K, CHOI J, HONG B H, KANG J, KIM H K, KIM Y J, BUNG C J, GANG B S, GEUN K H, HUI H B, JIN K Y, MO G J, BAE S, KIM H