国家/地区 韩国（6） 美国（6）
IPC部 B（6）
IPC大类 B82（6） C01（6）
IPC小类 B82B（6）
IPC B82B003/00（6）
发明人 LEE S H（3） LEE J（2） LEE J K（2）
LEE S（2）
公开年 2012（2） 2014（2）
申请年
专利权人 KOREA INST SCI TECHNOLOGY（6）

Formation of reduced graphene oxide used for electronic device e.g. thin film transistor, involves forming graphene oxide on substrate, and providing graphene oxide with white light pulse to reduce graphene oxide.

LIM J A, SONG Y, HONG J, CHANG J Y, SONG Y W, HONG J M

Preparing carbon material, preferably graphene using thermal evaporation, comprises depositing liquid polymer/polymer solution onto substrate, stabilizing obtained organic nanofilm and carbonizing stabilized organic nanofilm.

KIM T, JOH H, LEE S H, KIM T W, JOH H I

Preparing graphene used in e.g. LEDs, transistors involves treating graphite with acid to form graphite oxide, mixing with metal oxide nanoparticles; and treating with acid to separate graphene.

CHOI W K, PARK D H, KWON B W, SON D I, CHOI W

Fabricating graphene-controlled nano-graphite, used as basic material for e.g. lithium-ion battery electrode, comprises preparing graphene powders and fabricating graphene-controlled nano-graphite through heat treatment of graphene powders.

LEE J K

Fabricating graphene ribbons involves preparing carbon structure in which graphene ribbon is spirally grown, revealing tube shape; and applying energy to unroll the graphene helix into the graphene ribbons.

LEE J, LEE K, LEE S, KAP L J, LEE K I, LEE S H

Preparing graphene ribbons, comprises preparing graphitic material composed of e.g. graphene helices, and shortening the graphitic material by applying energy and decomposing the graphitic material into graphene ribbons.

LEE J, LEE S H, LEE W, LEE S, LEE U, LEE J K, LEE W S