国家/地区 韩国（5） 美国（3）
IPC部 B（5）
IPC大类 B82（5） C01（5） H01（2）
IPC小类 B82B（5）
IPC B82B003/00（5） C01B031/02（5） B82B001/00（3）
B82Y030/00（2） B82Y040/00（2） C01B031/00（2）
C01B031/04（2）
发明人 HONG J（2） HONG J M（2） KIM H（2）
LIM J A（2） SONG Y（2） SONG Y W（2）
公开年 2014（5）
申请年 2012（2）  2013（2） 
专利权人 KOREA INST SCI TECHNOLOGY（5）

Formation of reduced graphene oxide used for electronic device e.g. thin film transistor, involves forming graphene oxide on substrate, and providing graphene oxide with white light pulse to reduce graphene oxide.

LIM J A, SONG Y, HONG J, CHANG J Y, SONG Y W, HONG J M

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Preparing carbon material, preferably graphene using thermal evaporation, comprises depositing liquid polymer/polymer solution onto substrate, stabilizing obtained organic nanofilm and carbonizing stabilized organic nanofilm.

KIM T, JOH H, LEE S H, KIM T W, JOH H I

Making nanoparticles of target material, involves mixing graphene oxide with aqueous solvent to give aqueous solution, mixing target material with organic solvent to give organic solution, and mixing aqueous solution with organic solution.

LIM J A, SONG Y, HONG J, YOO D Y, KIM H, SONG Y W, HONG J M, KIM H S

Polyphase carbon nanostructures comprise graphene sheath made of graphene layer, and diamond nano-flakes inserted into graphene sheath.

LEE W S, LEE H J, BAIK Y J, PARK J K