国家/地区
IPC部 B（3）
IPC大类 B82（3）
IPC小类 B82B（3）
IPC B82B003/00（3）
发明人
公开年 2021（2）
申请年 2019（3）
专利权人

Nanocomposite material based on silicon and/or nitrogen-containing planar hetero-substituted carbon graphene-like structures comprises nitrogen, silicon and carbon atoms in graphene planes corresponding to structure.

ARKHIPOVA E A, IVANOV A S, SAVILOV S V, STOLBOV D N, SUSLOVA E V, CHERNYAK S A

Producing graphene, comprises providing a substrate containing material with providing gas containing carbon monoxide (II) and bringing the gas into contact with the substrate and keeping it at temperature to graphene on substrate surface.

GREBENKO A K, KRASNIKOV D V, NASIBULIN A G

Silicon-based graphene nanoconvex structure comprises substrate comprising single crystal silicon lower layer and silicon dioxide upper layer with granular protrusions, and graphene covered on substrate.

FAN N, PENG B, GUO J, LIU C, WANG Q