国家/地区 韩国（6）
IPC部 B（6）
IPC大类 B32（6）
IPC小类 B32B（6）
IPC C01B031/02（6） B82B003/00（5） B82Y030/00（4）
B32B009/00（3） B82B001/00（3） B82Y040/00（3）
C01B031/04（3） B32B037/02（2） C23C016/26（2）
H01B001/04（2） H01B005/14（2） H01B013/00（2）
发明人 BANDO M（2） HOBARA D（2） KADONO K（2）
KIMURA N（2） KOBAYASHI T（2） SHIMIZU K（2）
SUMINO K（2） YASUHARA D（2）
公开年 2013（4） 2012（2）
申请年 2012（6）
专利权人 SONY CORP（2）

Fabricating graphene structures, comprises fabricating a crystalline graphene layer on a surface, and subsequently decreasing crystallographic disorder of crystallographically disordered edges by heating crystalline graphene layer.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M, UNG K M

Partially altering defect area in a layer on substrate involves reacting substrate under reaction conditions to produce cationic area in exposed areas; adhering graphene oxide to cationic area to produce graphene oxide layer; and reducing.

MILLER S, YAGER T, MILLER S A, YAGER T A

Graphene structure, useful an electrode material of a touch panel and solar battery, comprises a substrate, a graphene layer, and a contact layer, where the graphene layer is laminated on substrate and formed of graphene doped with dopant.

KIMURA N, KOBAYASHI T, HOBARA D, BANDO M, SHIMIZU K, KADONO K, YASUHARA D, SUMINO K, HOBARA T

Graphene structure, useful as conductive film in e.g. solar cell, comprises conductive layer formed of graphene doped with dopant, and protective layer laminated on conductive layer and made of material having oxidation-reduction potential.

KIMURA N, HOBARA D, KOBAYASHI T, BANDO M, SHIMIZU K, KADONO K, YASUHARA D, SUMINO K

Fabricating graphene-controlled nano-graphite, used as basic material for e.g. lithium-ion battery electrode, comprises preparing graphene powders and fabricating graphene-controlled nano-graphite through heat treatment of graphene powders.

LEE J K

Graphene transferring method, involves adhering heat exfoliation sheet with target substrate, and pressurizing heat exfoliation sheet pressurized with graphene according to atmospheric condition.

HONG B H, CHOI J, KIM Y, KIM K S, KANG J, KIM H, CHOI J B