国家/地区 美国（4）
IPC部 B（4）
IPC大类 B32（4）
IPC小类 B32B（4）
IPC C01B031/04（4） C01B031/02（3） B82B001/00（2）
B82B003/00（2） B82Y030/00（2） B82Y040/00（2）
C01B031/00（2） H01L021/02（2）
发明人
公开年 2011（2）
申请年 2011（4）
专利权人

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Graphene transferring method involves compressing catalyst metal film and substrate film using initial roller, and separating substrate film from metal film.

NA D, YOON J, SONG Y, WON D, NA D H, YOON J H, SONG Y I, WON D K, YUAN D

Graphene nanomesh for forming transistor, sensor, and graphene structure, comprises sheet of graphene having periodically arranged apertures, where the apertures have a substantially uniform periodicity and substantially uniform neck width.

DUAN X, HUANG Y, BAI J

Nanocomposite material, useful to produce electronic device and/or structural material, comprises a substrate, optionally functionalized graphene, optional adhesive component to adhere graphene to substrate and an optional protective layer.

KINLOCH I A, YOUNG R J, NOVOSELOV K S