国家/地区 中国（5） 欧洲专利局（EPO）（5） 美国（5） 世界知识产权组织（5） 日本（4） 韩国（4） 印度（2）
IPC部 B（5）
IPC大类 B82（5）
IPC小类 B82B（5）
IPC C01B032/182（5）
发明人
公开年 2015（2） 2016（2）
申请年 2015（5）
专利权人

Method for forming e.g. drain contacts for e.g. graphene FET, involves forming grown-in graphitic interface layer at interface between source and graphene surface source contacts and drain contact and graphene surface drain contact.

COLOMBO L, VENUGOPAL A

Manufacture of graphene oxide involves contacting one end face of carbon-based three-dimensional material electrode(s) in parallel with electrolyte solution, electrolyzing, electrochemically-oxidizing, and cutting graphite sheet layers.

XU H, ZHOU Q

Synthesis of graphene derivatives and functional materials used in e.g. transistors, sensors, actuators, pharmaceutical, information displays and semiconductor comprises forming refluxed solution of starting material and additive.

TANIMOLA O W

Particle for particulate material used for composite material, particle dispersion and article comprises stacked sub-structures in which each sub-structure includes stack of graphene layers.

WALTERS I, WALTERS D

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H