国家/地区 美国（3）
IPC部 B（3）
IPC大类 B82（3）
IPC小类 B82B（3）
IPC B82Y040/00（3）
发明人
公开年
申请年 2011（2） 
专利权人

Method for production of atomic bilayer nanotape, involves oxidizing portion of monolayer to provide oxidized portion, and removing oxidized portion to provide atomic layer nanotape comprising transition metal dichalcogenide material.

HARUTYUNYAN A R, LI X

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S