国家/地区 美国（8）
IPC部 B（8）
IPC大类 B82（8）
IPC小类 B82B（8）
IPC B82Y030/00（8） B82Y040/00（8） B82B003/00（7）
C01B031/02（7） C01B031/04（5） B82B001/00（3）
C23C016/26（3） H01B001/04（3） B05D005/12（2）
B32B009/00（2） C01B032/188（2） C23F001/02（2）
C30B029/02（2） H01L021/02（2） H01L029/786（2）
发明人 VEERASAMY V（2） VEERASAMY V S（2）
公开年 2011（8）
申请年 2010（3）  2011（3）  2009（2） 
专利权人 GUARDIAN GLA.（2） GUARDIAN IND（2） GUARDIAN IND.（2） SAMSUNG ELEC.（2）

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S

Forming graphene nano ribbon used in display device involves depositing graphene sheet on surface of substrate, forming plasma mask with nano pattern on sheet, and forming nano pattern in sheet by plasma treating stack structure having mask.

SHIN H, CHOI J, LEE Y, HAN G, CHOI J Y, HAN G H, LEE Y H, SHIN H J

Forming a nano-perforated graphene material, comprises forming an etch mask defining an array of holes over a graphene material and patterning the array of holes into the graphene material.

ARNOLD M, GOPALAN P, SAFRON N S, KIM M, ARNOLD M S

Three-dimensional nanostructure used for field-emitting device, is obtained by laminating graphene film and nano-material chosen from nanowires, nanotubes, nanorods, nanoneedles and nanoparticles.

KIM S O, LEE W J, LEE D H, HAN T H, KIM J E, LEE J A, LEE K J

Making graphene used for coating graphene-coatable materials by providing starting material comprising carbonaceous material sulfur and excluding transition metal and heating starting material.

CHENG I F, MCILROY D N, FOUTCH J, GRIFFITHS P R

Carbonaceous nanocomposite used as electrode for battery and field emission display, has graphene sheet on top surface of substrate and carbonaceous nano material having specified aspect ratio provided at other surface of graphene sheet.

JEON M, CHOI H, HWANG S, KIM H, JEON M H, CHOI H K, HWANG S H, KIM H K

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V