国家/地区 美国（3）
IPC部 B（3）
IPC大类 B82（3）
IPC小类 B82B（3）
IPC B82B003/00（3） C01B031/02（3） B82Y040/00（2）
C01B031/04（2）
发明人
公开年
申请年 2011（3）
专利权人

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Producing an array of single-crystal graphene islands, to make e.g. transistor, comprises e.g. providing substrate, cleaning substrate surface, spin-coating poly(methyl methacrylate) layer on the surface, curing, and performing lithography.

YU Q, PEI S

Forming a nano-perforated graphene material, comprises forming an etch mask defining an array of holes over a graphene material and patterning the array of holes into the graphene material.

ARNOLD M, GOPALAN P, SAFRON N S, KIM M, ARNOLD M S