国家/地区 韩国（4）
IPC部 B（4）
IPC大类 B82（4） C01（4） B32（3）
B29（2） B41（2）
IPC小类 B82B（4）
IPC B82B003/00（4） B32B038/10（3） B32B037/02（2）
B32B037/10（2） B32B037/14（2） B82Y040/00（2）
C01B031/02（2） C01B031/04（2）
发明人 WON D（3） WON D K（3） CHO S（2）
CHO S H（2） SONG Y（2） SONG Y I（2）
公开年 2011（2） 2012（2）
申请年 2011（3） 
专利权人 HANWHA TECHWIN CO LTD（4）

Graphene synthesis chamber for synthesizing graphene comprises chamber case in which substrate comprising metal thin film, gas supply unit, main heating unit which emits light to inner space to heat substrate; and auxiliary heating unit.

WON D, NAM W, WON D K, NAM W S

Graphene transferring method involves compressing catalyst metal film and substrate film using initial roller, and separating substrate film from metal film.

NA D, YOON J, SONG Y, WON D, NA D H, YOON J H, SONG Y I, WON D K, YUAN D

Manufacturing method of graphene transfer film involves applying air pressure to at least one of graphene growth film and carrier film so that graphene and carrier film are attached to each other.

CHO S, SONG Y, CHO S H, SONG Y I

Method for transferring graphene from graphene forming structure onto desired object e.g. circuit substrate, involves separating oxide layer from metal catalyst layer and removing metal catalyst layer by using etching solution.

CHO S, WON D, CHO S H, WON D K