国家/地区 韩国（5） 世界知识产权组织（3） 中国（2） 美国（2）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B032/182（6）
发明人 JO T（2） JO T J（2） KIDEOK S（2）
LEE S（2） LEE S H（2） PARK S（2）
SEULKI P（2） SONG K（2） SONG K D（2）
SUNHYOUNG L（2） TAE J J（2）
公开年 2018（4） 2017（2）
申请年 2017（6）
专利权人 ILJIN MATERI.（2）

Method for increasing viscosity of graphene oxide suspension, involves feeding first viscosity graphene oxide suspension into electrophoretic deposition equipment, and performing deposition process by applying voltage to equipment.

JIN A S, SEONGGYU P

Preparing metal oxide-doped graphene used for field effect transistor, and in p-type semiconductor, comprises e.g. depositing graphene on first substrate, and transferring deposited graphene onto second substrate to form graphene electrode.

KYU K E, SOO P C

Manufacture of polynorepinephrine/reduced graphene oxide film used as redox mediator in artificial photosynthesis system, involves preparing graphene oxide film, immersing in buffer solution containing norepinephrine precursor and agitating.

PARK C B, SON E J, KIM J H, KO J W

Device used for reducing carbon dioxide, comprises oxidation electrode, and reduction electrode comprising nitrogen-doped graphene, immersed in electrolyte solution to generate carbon compound by reduction reaction of carbon dioxide.

YAMAGUCHI HITOSHI, YAMAGUCHI H

Electrolytic copper foil used for producing graphene, has preset ratio of surface roughness of copper foil and surface roughness of copper foil after heat treatment.

JO T J, LEE S H, PARK S, SONG K D, TAE J J, SUNHYOUNG L, SEULKI P, KIDEOK S, JO T, LEE S, SONG K

Electrolytic copper foil used for forming graphene during fabrication of semiconductor component for computer, electronic paper and display, has preset tensile strength before and after subjecting to heat-treatment.

JO T J, LEE S H, PARK S, SONG K D, TAE J J, SUNHYOUNG L, SEULKI P, KIDEOK S, JO T, LEE S, SONG K