国家/地区 日本（3） 世界知识产权组织（3）
IPC部 C（3）
IPC大类 C01（3） C23（3） H01（3）
IPC小类 C01B（3）
IPC C01B032/186（3） C23C016/26（3） H01L021/205（3）
发明人 WADA M（3）
公开年 2022（3）
申请年 2022（3）
专利权人 TOKYO ELECTR.（3）

Substrate processing includes taking substrate into processing vessel, removing oxygen-containing layer on substrate using plasma of gas mixture including hydrogen-containing gas, and forming nucleation layer and graphene film on substrate using plasma of gas mixture including carbon-containing gas.

IFUKU R, MATSUMOTO T, WADA M, KABUKI N

Processing substrate by loading substrate into processing container, forming carbon film on substrate with plasma of mixed gas containing carbon-containing gas while inside of processing container is maintained at pressure, and changing inside of processing container.

WADA M, IFUKU R, MATSUMOTO T, YAMADA H, TAKASHI M

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN