国家/地区 韩国（4）
IPC部 C（4） B（2）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C23C016/26（3） C01B032/184（2） C01B032/186（2）
C01B032/194（2）
发明人
公开年 2022（4）
申请年 2022（4）
专利权人

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Manufacture of shadow mask, involves forming buffer layer, depositing metal layer, forming amorphous carbon layer and crystalline carbon layer, removing amorphous carbon layer and metal layer, and separating buffer layer and crystalline carbon layer.

MOON S I, KWON Y, WOOK Y B, MOON J, KIM K S, LEE S M

Manufacturing wrinkled graphene comprises immersing polymeric substrate, wrinkled graphene, polystyrene sulfonic acid, or polystyrene substrate in water to remove polystyrene substrate by dissolving polystyrene sulfonic acid substrate.

HONG S, NARUTE P, NARUTEPHRASANT