国家/地区 韩国（6） 美国（4）
IPC部 C（6） B（4） H（4）
IPC大类 C01（6） B01（3） H01（3）
IPC小类 C01B（6）
IPC C01B031/02（6）
发明人 CHOI C G（3） CHOI J S（3） YU Y J（3）
CHOI H K（2） CHUNG K H（2） KIM J T（2）
YOUN D H（2）
公开年
申请年 2014（2） 
专利权人 ELECTRONICS TELECOM RES INST（6）

Manufacturing electrode used for capacitor, comprises forming an oxidized graphene thin film by applying composition containing oxidized graphene on a substrate, and irradiating obtained graphene oxide film with light.

SUK Y Y, KYU Y I, HWAN S J, NA K B, GYOO K I, HONG S

Gene amplifying and detecting device comprises a gene amplifying chip including a chamber formed in it, a reaction solution filled in the chamber and including a fluorescent material, a light source, a light detector, and graphene heaters.

CHUNG K H, KIM J T, CHOI Y H, CHOI C G, CHOI H K, YU Y J, YOUN D H, CHOI J S

Method for growing single-layer graphene used for graphene device, involves forming silicon oxide layer, forming multilayer catalyst layer having nickel and copper layers with preset thickness ratio, and growing single-layer graphene.

CHOI J S, CHOI H K, KIM K C, YU Y J, KIM J S, CHOI C G

Transferring graphene to fabricate graphene dual junction diode involves forming graphene layer by composing graphene and base layer; depositing self-assembled monolayer and separating combination layer of monolayer/graphene from base layer.

CHOI J S, YU Y, KIM J T, CHUNG K H, YOUN D H, CHOI C G, YU Y J

Manufacturing graphene used in electronic device, comprises mixing implant and graphite produced material and then heating, and peeling off graphene from obtained intercalation product including alkali metal or alkaline earth metal.

MIN G Y, GI J S, GYU Y I, BON G J

Depositing a graphene film involves supplying a gaseous-phase graphene source to a substrate, adsorbing the graphene source to form an adsorbed layer on the substrate, and activating the adsorbed layer by heating the adsorbed layer.

AHN S, KANG S Y