国家/地区 韩国（5） 美国（4）
IPC部 C（5）
IPC大类 C01（5） H01（2）
IPC小类 C01B（5）
IPC C01B031/04（4） C01B031/02（3）
发明人 CHOI C G（5）
公开年 2016（3）
申请年 2014（2） 
专利权人 ELECTRONICS TELECOM RES INST（5）

Photo detector for detecting incident light by using arrangement of single-layer graphene and multi-layer graphene, has first electrode formed at end of single-layer grapheme, and second electrode formed at end of multi-layer graphene.

KIM J T, CHOI C G, YU Y J, CHUNG K H, CHOI J S, CHOI H K

Manufacture of graphene involves forming double metal catalyst layer comprising two metal layers by calculating thickness ratio of metal layers, and growing graphene using chemical vapor deposition on double metal catalyst layer.

CHOI J S, CHOI H K, CHOI C G, YU Y J, KIM J T, CHUNG K H, HWANG C Y

Gene amplifying and detecting device comprises a gene amplifying chip including a chamber formed in it, a reaction solution filled in the chamber and including a fluorescent material, a light source, a light detector, and graphene heaters.

CHUNG K H, KIM J T, CHOI Y H, CHOI C G, CHOI H K, YU Y J, YOUN D H, CHOI J S

Method for growing single-layer graphene used for graphene device, involves forming silicon oxide layer, forming multilayer catalyst layer having nickel and copper layers with preset thickness ratio, and growing single-layer graphene.

CHOI J S, CHOI H K, KIM K C, YU Y J, KIM J S, CHOI C G

Transferring graphene to fabricate graphene dual junction diode involves forming graphene layer by composing graphene and base layer; depositing self-assembled monolayer and separating combination layer of monolayer/graphene from base layer.

CHOI J S, YU Y, KIM J T, CHUNG K H, YOUN D H, CHOI C G, YU Y J