国家/地区 韩国（4） 美国（2）
IPC部 C（4） H（3） B（2）
IPC大类 C01（4） H01（3）
IPC小类 C01B（4）
IPC C01B031/02（4）
发明人
公开年 2017（3）
申请年 2016（3） 
专利权人 KOREA ADVANCED SCI TECHNOLOGY INST（4）

Preparation of carbon nanotubes and graphene for forming conductive film, involves heat-treating mixture of carbon nanotube and graphene precursors and intercalating compound, peeling resultant in solvent, and removing impurities.

JEON S, KIM J, JIN K, JUNG M K, SEOK W J

Manufacturing graphene used in field effect transistor, supercapacitor, hydrogen generation or storage, solar cell, photocatalyst and biosensor, comprises forming the graphene by unzipping doped carbon materials by an external stimulus.

KIM S O, LEE H J, LIM J, KIM S

Graphene-nanomaterial complex includes nanomaterials which are disposed between graphenes that are not disposed on same plane to form three-dimensional graphene structure, in which graphenes, nanomaterials or both form electrical network.

HONG S H, JUN G H, OH J Y, RYU H J, GWANG H J, HO J R, JAE Y O, SOON H H

N-doped graphene used for ultracapacitor, is obtained by substituting at least one of carbon atom by nitrogen.

CHOI J W, KANG J K, JEONG H M