国家/地区 韩国（4） 美国（2）
IPC部 C（4） B（3） G（3）
IPC大类 C01（4） B01（3） G03（3）
IPC小类 C01B（4）
IPC C01B032/194（4）
发明人 KIM H Y（3） MI K H（3） KIM H（2）
KIM H K（2） KIM H M（2） KIM S G（2）
KIM S K（2） SUNG K H（2）
公开年 2022（2）
申请年
专利权人 KOREA ELECTRONICS TECHNOLOGY INST（4）

Direct growth method of multilayer graphene through pressure heat treatment, comprises forming etch stop layer, forming metal catalyst layer, forming amorphous carbon layer and directly growing multilayer graphene on seed layer.

KIM H, KIM S K, MI K H, YOO C S, JOJINWOO, KIM H Y, JEONJUNHYUCK, YUNSUNGHO, SUNG K H, LEE S M

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Directly growing multilayer graphene used in a pellicle for extreme ultraviolet lithography, involves forming small-layer graphene on SiN substrate, forming metal catalyst layer on small-layer graphene, and forming an amorphous carbon layer.

KIMHYUNGKEUN, MI K H, KIM H Y, LEE G H, SUNG K H, KIM H M, KIM S G, KIM H K

Cleaning of graphene oxide involves adding a cation to a graphene oxide solution containing graphene oxide and filtering the graphene oxide solution, and removing cation from the graphene oxide solution to obtain final product.

YANG W S