国家/地区 中国（2） 日本（2）
IPC部 C（3）
IPC大类 C01（3） C23（3）
IPC小类 C01B（3）
IPC C23C014/06（3）
发明人 XIE X（3） DING G（2） JIANG M（2）
TANG S（2） WANG H（2） XIE H（2）
公开年
申请年 2015（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（3）

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Preparing graphene nano belt used for preparing electronic devices, involves carrying out metal catalyzed etching method to obtain nano strip shaped groove structure set with hexagonal boron nitride groove module.

HE L, JIANG M, LI L, XIE X, TANG S, ZHANG D, XIE H, WANG H, CHEN L

Preparation of graphene involves injecting germanium ion to silicon carbide substrate, annealing obtained structure, breaking silicon carbide substrate to silicon and carbon, combining silicon and germanium, and recombining carbon.

DI Z, CHEN D, DING G, WANG G, XIE X, ZHANG M, YE L, ZHENG X, LU Z