国家/地区 中国（6）
IPC部 C（6） B（3） H（2）
IPC大类 C01（6） B82（2） H01（2）
IPC小类 C01B（6）
IPC C01B032/194（3） B82Y030/00（2） B82Y040/00（2）
C01B021/064（2） C01G039/06（2）
发明人 WANG J（3） CHENG G（2） ZHANG G（2）
公开年 2021（6）
申请年 2021（5） 
专利权人 UNIV NORTHWESTERN POLYTECHNICAL（6）

Preparing 3D nanostructure electromagnetic wave absorbing material in flexible electromagnetic wave absorbing film, involves dispersing metallocene, graphene in acetonitrile to obtain dispersion and subjecting to microwave reaction.

LIANG B, FENG M, ZHANG K, CHENG H, LUO B, ZHAO Z

Preparing manganese dioxide/carbon thin film positive electrode material involves adding manganese salt, oxidant and pH adjuster to water to dissolve to form solution, and dispersing acid into solution and stirring at room temperature.

WANG J

Preparing graphene oxide/molybdenum disulfide composite film device used as optical storage device, involves subjecting quartz plate to clean water, dispersing molybdenum disulfide, graphene oxide in deionized water, ultrasonic treatment.

WANG J, CHENG G, ZHANG G

Preparing an ultra-thin functional thin film material without a substrate for preparation of solid density plasma targets in molecular screening, comprises evaporating, sputtering, and depositing on the substrate material.

ZHANG G, CHENG G, WANG J, LI G

Preparing nitrogen-doped graphene ink useful in uniform droplet jet printing platform, comprises preparing graphene oxide powder and nitrogen-doped graphene, adding nitrogen-doped graphene into water and performing ultrasonic treatment.

LI H, ZHOU F, QI L, LUO J, LIAN H, LI Y

Preparing two-dimensional materials by using oxide semiconductor nanopowders to exfoliate layered materials comprises e.g. selecting p-type semiconductor nanopowders, and grinding and compounding exfoliated material.

SU L, WANG X, WANG B, SUO Y, AKEZHUOLI Q, AN L, YAN F, HUANG W