国家/地区 美国（6）
IPC部 C（6）
IPC大类 C01（6） H01（4） B82（3）
IPC小类 C01B（6）
IPC C01B031/04（4） H01G011/86（3） H01M004/04（3）
B82B001/00（2） B82Y030/00（2） B82Y040/00（2）
C01B031/02（2） C01B032/194（2） H01G011/26（2）
H01G011/36（2） H01G011/46（2） H01M004/36（2）
H01M004/48（2） H01M004/62（2） H01M004/66（2）
发明人 DUAN X（6）
公开年
申请年
专利权人 UNIV CALIFOR.（5）

Forming electrode material involves loading electrochemically active material onto graphene sheets, combining electrochemically active material-loaded graphene sheets with holey graphene oxide sheets to form mixture.

SUN H, HUANG Y, DUAN X

Formation of electrode material used for forming electrode structure, involves loading electrochemically active material onto graphene sheets, combining loaded graphene sheets with holey graphene oxide sheets and reducing obtained mixture.

DUAN X, HUANG Y, SUN H

Formation of graphene-based material used as supercapacitor electrodes, involves treating mixture comprising etchant and graphene oxide sheets, dispersing holey sheets into solvent and treating dispersion.

DUAN X, XU Y, HUANG Y

Growing graphene used e.g. in graphene material, comprises annealing metal substrate up to growth temperature for annealing time period and in presence of non-reducing gas, and introducing gas mixture to grow graphene over the substrate.

DUAN X, ZHOU H

Graphene preparation by mixing divalent metal ion salt, trivalent metal ion salt, alkyl anion salt and carbon source with water, mixing salt solution with alkali solution to obtain layered dihydroxy composite metal oxide, and calcining.

CHEN X, DUAN X, LIU H, SUN J, YANG W

Graphene nanomesh for forming transistor, sensor, and graphene structure, comprises sheet of graphene having periodically arranged apertures, where the apertures have a substantially uniform periodicity and substantially uniform neck width.

DUAN X, HUANG Y, BAI J