国家/地区 韩国（6） 美国（4） 中国（2） 日本（2）
IPC部 B（6）
IPC大类 C01（6） B01（5） B05（2）
B82（2） C23（2）
IPC小类 C01B（6）
IPC C01B031/02（6）
发明人 JUNG H（6）
公开年 2014（3） 2011（2）
申请年 2013（3）  2010（2） 
专利权人 SAMSUNG ELEC.（2） SNU R DB FO.（2） TOSHIBA SAMS.（2） UNIV DONGGUK.（2）
UNIV SEOUL N.（2）

Manufacture of nitrogen-doped graphene involves adding hydroxyl radical acceptor to aqueous graphite oxide solution, adding nitrogen precursor to solution, and irradiating radiation.

JUNG H, KANG Y M, KANG M, LEE D H, JO M R, YANG J H

Apparatus for fabricating graphene comprises light source for irradiating graphite oxide layer on substrate; light source for irradiating irradiated graphite oxide layer; control unit for controlling irradiation from the light sources.

SONG B, CHOI K, CHOI N, SHIM H, JUNG H, LEE J, BYUNG Y S, KIL S C, NAG E C, HYOUNG S S, HAN Y J, JUNG H L

Fabricating graphene, i.e. an allotrope of carbon, comprises irradiating graphite oxide layer on substrate with light from first light source, and irradiating the irradiated graphite oxide layer with light from second light source.

SONG B, CHOI K, CHOI N, SHIM H, JUNG H, LEE J, BYUNG Y S, KIL S C, NAG E C, HYOUNG S S, HAN Y J, JUNG H L

Producing graphene used for nanoelectronics, sensors, batteries, super capacitors and hydrogen storage applications, comprises mixing and irradiating hydroxyl radical receptor in a solution of graphene oxide.

JUNG H, KANG M G, KWON M J, LEE D H

Method of transferring larger-sized graphene used in electric circuit, involves removing adhesive and protection layers from graphene layer respectively.

BAE S, CHUNG H, HEO J, JUNG M, KANG S, SEO D, SEO S, WOO Y, BAE S K, CHUNG H J, HEO J S, JUNG M H, KANG S R, SEO S A, WOO Y S, JUNG H J, HUH J S, YEO R, HUH J, JUNG H

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H