国家/地区 韩国（7）
IPC部 C（7）
IPC大类 C01（7） H01（5） B82（4）
C08（2） C23（2）
IPC小类 C01B（7）
IPC C01B031/02（7）
发明人 KIM T（7）
公开年 2014（3） 2011（2）
申请年 2010（2）  2013（2） 
专利权人 KIM T（2） LG ELECTRONI.（2） SNU R DB FO.（2） SUH K S（2）

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Preparing carbon material, preferably graphene using thermal evaporation, comprises depositing liquid polymer/polymer solution onto substrate, stabilizing obtained organic nanofilm and carbonizing stabilized organic nanofilm.

KIM T, JOH H, LEE S H, KIM T W, JOH H I

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J

Graphene-based laminate has substrate, graphene layer which is formed at upper portion of substrate, and organic dopant which is formed on surface(s) of substrate.

KIM H, KIM T, YANG W, KIM H K, KIM T Y, YANG W S

Electrochemical device e.g. fuel cell, has electrode formed using graphene/ionic-liquid polymer composite in which ionic-liquid polymers are bonded to surface of graphene.

SUH K S, KIM J E, KIM T Y, KIM J, KIM T

Graphene dispersion used for manufacturing graphene-ionic liquid polymer composite, comprises graphite dispersed in ionic liquid.

SUH K S, KIM J E, KIM T Y, KIM J, KIM T

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T