国家/地区 韩国（6） 美国（5） 中国（4） 日本（3） 欧洲专利局（EPO）（2） 世界知识产权组织（2）
IPC部 B（6）
IPC大类 B82（6）
IPC小类 C01B（6）
IPC B82Y030/00（4） B82Y040/00（4） C01B031/02（4）
C01B031/04（4） B82B003/00（2） C01B032/19（2）
C08K003/04（2） H01G011/22（2） H01M004/583（2）
H01M004/62（2）
发明人 KIM T（6）
公开年 2011（2）
申请年 2010（2） 
专利权人 SUH K S（2） UNIV GACHON .（2）

Producing graphene quantum dots, comprises e.g. introducing carbon-based layered structure, forming interlayer insert composite, placing interlayer composite on substrate and heat-treating, and applying voltage to substrate.

JUNG J H, JUNGWONSUK, KIM T

Making graphene metal nanoparticle-composite, comprises e.g. making graphene by applying shearing force to solution of graphite-based material, preparing metal nanoparticles by applying shearing force to solution of e.g. metal precursor.

KIM T Y, HONG J P, KIM T, HONG J

Preparing carbon material, preferably graphene using thermal evaporation, comprises depositing liquid polymer/polymer solution onto substrate, stabilizing obtained organic nanofilm and carbonizing stabilized organic nanofilm.

KIM T, JOH H, LEE S H, KIM T W, JOH H I

Electrochemical device e.g. fuel cell, has electrode formed using graphene/ionic-liquid polymer composite in which ionic-liquid polymers are bonded to surface of graphene.

SUH K S, KIM J E, KIM T Y, KIM J, KIM T

Graphene dispersion used for manufacturing graphene-ionic liquid polymer composite, comprises graphite dispersed in ionic liquid.

SUH K S, KIM J E, KIM T Y, KIM J, KIM T

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T