国家/地区 韩国（4） 美国（2）
IPC部 C（4）
IPC大类 C01（4） B82（2） H01（2）
IPC小类 C01B（4）
IPC C01B031/02（4）
发明人 LEE C（4）
公开年 2014（3）
申请年 2013（4）
专利权人 SAMSUNG ELEC.（2）

Manufacturing graphene, comprises heating a substrate, irradiating a target containing carbon source with pulse laser, and depositing by passing carbon fine particles generated from laser irradiated target through the substrate.

LEE C, BYEONG J N

Graphene oxide used as substituent for enzyme, in biological material industry and detergent industry, hydrolyzes ester linkage of organic compound.

JANG S, JEONG H K, LEE C, LEE H, HEON J S, HAN J, KYUNG J H

Manufacturing method of graphene device e.g. FET , nanogap device, graphene sensor involves etching protection layer until residual layer made of material for forming protection layer remains on active area of graphene layer.

LEE J, JEON T, KIM Y, LEE C, JUNG Y, LEE J H, JEON T H, KIM Y S, LEE C S, JUNG Y S

Apparatus for manufacturing device used for preparing graphene for electronic circuit, comprises graphene structure including metal catalyst layer formed on substrate, protection layer, and graphene layer, and power unit.

LEE J, JUNG Y, KIM Y, LEE C, MOON C, LEE J H, JUNG Y S, KIM Y S, LEE C S, MOON C Y, MUN Z R