国家/地区 台湾（2） 美国（2）
IPC部 C（4）
IPC大类 C01（4） H01（2）
IPC小类 C01B（4）
IPC C01B032/182（2）
发明人 LIN C（4）
公开年 2022（4）
申请年 2021（3） 
专利权人

Semiconductor device, comprises substrate and fin structure on substrate, and includes epitaxial region, etch stop layer on epitaxial region, interlayer dielectric layer on etch stop layer, and metal contact through etch stop layer and interlayer dielectric layer.

SHEN T, HUANG J, CHEN S, LIN H, LIN C, WOON W, KHADERBAD M A

Graphene-aluminum alloy material useful in aluminum-based composite material e.g. particle reinforcing body and fiber reinforcing body, comprises silicon, iron, copper, magnesium, boron, molybdenum, graphene powder, rare earth, aluminum and impurities.

LIN C, NAN Q

Forming dry electrode for measuring electrophysiological readings, by growing silicon carbide film on silicon substrate, depositing metals on surface of silicon carbide film, heating to react metal with silicon of silicon carbide film to form carbon and silicide and carbon forms graphene layer.

IZZO K A, AMJADI POUR M, FAISAL S N, LIN C, IACOPI F

Forming graphene on flexible substrate, involves providing polymer substrate including metal structure, carbon source and carrier gas, and subjecting polymer substrate to plasma enhanced chemical vapor deposition process.

TSENG C, LIN C, YEH N, LEU C, LU C