国家/地区 世界知识产权组织（3）
IPC部 C（3）
IPC大类 C01（3） C23（2） H01（2）
IPC小类 C01B（3）
IPC C01B031/04（2） C23C016/26（2）
发明人 SACHDEV H（3）
公开年 2015（2）
申请年
专利权人 BASF SE（2） MAX PLANCK G.（2）

Production of structure e.g. borophene-based structure, involves contacting surface of substrate with precursor, and depositing structure containing borophene, boron domain, and/or multitude of boron-containing clusters with boron-boron bonds.

DUESBERG G, AUWAERTER W, SACHDEV H, GONZALEZ CUXAT M, SEUFERT K J, CHESNYAK V

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K