国家/地区 中国（7）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B032/186（3） C01B032/198（2）
发明人 WEI C（7）
公开年 2017（5） 2018（2）
申请年 2017（7）
专利权人 13TH RES INS.（4） SHANDONG JIN.（3）

Preparing single-layer graphene on the surface of ultra-nano diamond comprises pre-processing ultra-nano-diamond film for removing surface impurities and surface stress, forming metal layer and subjecting to high temperature annealing.

GUO J, WEI C, FENG Z, FANG Y, HE Z, WANG J, LIU Q, ZHOU C, GAO X

Modified chemical vapor deposition for preparing uniform graphene material, involves selecting silicon carbide substrate, cleaning, drying, vacuumizing, turning on microwave power, heating and removing gas adsorbed on surface substrate.

LIU Q, WEI C, HE Z, WANG J, GUO J, ZHOU C, FENG Z, YU C

Preparation of low-fold density graphene material involves taking insulating substrate, cleaning, drying, putting into chemical vapor deposition equipment, vacuumizing, turning on the microwave power, heating and reacting.

LIU Q, WEI C, HE Z, WANG J, GUO J, ZHOU C, FENG Z

Preparing hydroxylated graphene comprises e.g. preparing oxidized graphite, then treating graphene oxide with high-power ultrasonic stripping apparatus, then subjecting liquid crystal to low-temperature supercritical pressure peeling.

ZHANG Z, ZHANG M, MOU Y, LI X, WEI C, YU W, MU Y

Preparation of graphene oxide, involves dripping microcrystalline graphite to reaction vessel containing sulfuric acid, adding oxidant under ice bath condition, stirring, placing mixed system in water bath, and dripping deionized water.

HU K, ZHANG M, MOU Y, WEI C, SONG Y, YU W

Industrial grade device used for purifying graphene oxide solution comprises membrane filtration unit, conduit, air pressure pipeline, material inlet and outlet.

WEI C, ZHANG M, HU K, MOU Y, ZHANG Z, LI X

Preparation of nanocrystalline graphene on sapphire substrate, involves placing sapphire substrate in graphene plasma-enhanced chemical vapor deposition equipment, introducing inert gas, pretreating substrate in hydrogen atmosphere.

WEI C, FENG Z, LIU Q, HE Z, WANG J, SONG X, ZHOU C