国家/地区 中国（3）
IPC部 C（4）
IPC大类 C01（4） H01（2）
IPC小类 C01B（4）
IPC C01B032/184（4）
发明人 WU C（4）
公开年 2020（2）
申请年 2018（2） 
专利权人 ENN SCI TEC.（2）

Preparing graphene conductive film, comprises allocating graphene, surfactant and solvent, mixing graphene and surfactants and solvent into paste, placing paste on substrate to form film, drying film, and thermally annealing film.

CHEN M, WU C, CHUNG M, KOO H

Graphene preparing device includes graphene reaction chamber provided with reactant-bearing heating plate and electric field generating device, plasma chamber provided with magnetic field generating device, and plasma jet orifice.

DAI L, LI B, WU C, HE Y, ZHAO G, LI L, MENG Y

Preparing graphene comprises heating graphene oxide placed in first temperature zone, an and heating metal reducing agent placed in second temperature zone to combine metal reducing agent with oxygen containing particle.

LI B, DAI L, WU C, HAN L, ZHAO G, FANG X, LI L, MENG Y

Preparation of honeycomb structured graphene/zinc oxide nanorod composite film used for photoelectric conversion device, involves immersing graphene/zinc oxide nanorod composite film in zinc salt-hexamethylenetetramine mixed solution.

QIN W, SUN H, YIN S, WU C, CHEN H, MEN X