国家/地区 美国（3） 中国（2） 日本（2） 台湾（2）
IPC部 C（4）
IPC大类 C01（4） C23（2） H01（2）
IPC小类 C01B（4）
IPC C01B031/04（3） C01B031/02（2）
发明人 WU T（4）
公开年 2015（3）
申请年 2015（4）
专利权人 SHANGHAI INS.（2）

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Manufacturing graphene film involves providing substrate, distributing graphene slurry on substrate, causing graphene slurry to distribute on substrate, and treating graphene slurry with atmosphere pressure plasma jet.

CHENG I, CHEN J, HSU C, CHOU P, LIU H, CHANG H, LIANG S, WU T, CHENG I C, CHEN J Z, HSU C C, CHOU P T, LIU H W, LIANG S P, WU T J

Electrolyte composition used in battery e.g. lead acid battery, comprises graphene.

WU T, CHANG Y, WU T Y, CHANG Y W, WU D, ZHANG Y

Method for preparing graphene-boron nitride hetero-junction, involves heating and removing heat release adhesive tape to obtain graphene-boron nitride hetero-junction.

CHEN J, LU G, WU T, ZHANG X, WANG H