国家/地区 美国（3） 韩国（2） 世界知识产权组织（2）
IPC部 B（4）
IPC大类 B01（4） C01（4） H01（3）
C23（2） G03（2）
IPC小类 B01J（4）
IPC B01J019/08（4）
发明人
公开年 2022（2） 2023（2）
申请年 2022（4）
专利权人

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Production of solid carbon used in composition of matter, involves receiving carbon dioxide and water in reactor, dissociating carbon dioxide and water to form dissociated species, exposing dissociated species to electric field to facilitate reactions, generating and outputting solid carbon.

STOWELL M W, SIENKO L, STOWELL W M

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S