国家/地区 韩国（7）
IPC部 B（7）
IPC大类 B01（7） C01（7） B82（2）
IPC小类 B01J（7）
IPC B01J019/24（7）
发明人
公开年 2013（4） 2014（2）
申请年 2012（7）
专利权人 SAMSUNG TECH.（2）

Manufacture of graphene involves pulverizing pure graphite, reacting resultant graphite powder with supercritical carbon dioxide generated by supercritical device, and separating graphene from obtained hexagonal carbon crystal.

HONG T E, SON J H, PARK G H, HONG S K

Apparatus for forming graphene layer used in manufacture of nanoscale graphene semiconductor device, has graphite segment separated from support stand by relative motion, and substrate that is adhered to the separated graphite segment.

LEE Y S, KIM J H

Device used for synthesizing graphene, comprises deposition chamber, uncoiler which continuously supplies catalyst substrate, coiler which continuously receives catalyst substrate, and lower shell.

KIM K, KIM K H

Manufacture of graphene powder involves drying graphene oxide solution, and reducing obtained graphene oxide powder using vaporized reducing agent.

LEE D, LEE S, SEO B, BYUN N

Graphene synthesizer includes a vacuum part and an annealing part for vacuumizing and annealing catalytic metal, graphene synthesis unit for synthesizing graphene on surface of catalytic metal and a graphene cooling part.

YOON J H

Material useful to provide refrigeration, and for photovoltaic or thermionic power generation, comprises carbon allotrope (graphene or graphite) doped with boron nitride, and an alkali metal (potassium) intercalated within carbon allotrope.

FISHER T, FISHER T S

Synthesizing graphene, comprises loading catalyst metals into chamber, increasing sizes of grains of catalyst metals, raising temperature inside the chamber while providing vapor carbon source and forming graphene.

SONG Y, KIM H, HONG B, AHN J, AHN J H, HONG B H, KIM H K, SONG Y I