国家/地区 中国（2） 日本（2）
IPC部 B（4） C（4） H（2）
IPC大类 B01（4） C01（4） H01（2）
IPC小类 B01J（4）
IPC B01J035/02（4）
发明人
公开年 2021（4）
申请年 2019（4）
专利权人

Copper film catalyst for chemical vapor deposition growth of graphene thin film material, comprises hydrophobically surface treated quartz sheet as base material, and copper film formed on surface of base material.

YU Y, SUN F, FENG A, CHEN B, MI L, SONG L

Preparing doped graphene by converting polycrystalline metal catalyst thin film into single crystal metal catalyst thin film through abnormal grain growth and synthesizing doped graphene on thin film by chemical vapor deposition.

KIM K, NAM J

Evaluation of oxygen reduction activity of carbon-based catalyst used in electrode catalyst, involves arranging catalyst on semiconductor surface, immersing in etching solution to form etching traces, and evaluating from depth of traces.

ARIMA K

Silicon-nitrogen co-doped graphene material used as catalyst or carrier in electrocatalysis and photoelectric catalysis, comprises silicon atoms and nitrogen atoms co-doped in graphene framework.

LI X, DI G, YU Q, LV L, CHEN J, NODA K, GOTO S