国家/地区 美国（5）
IPC部 B（5）
IPC大类 B32（5）
IPC小类 B32B（5）
IPC B32B005/00（5）
发明人 MILLER S（2） MILLER S A（2）
公开年 2013（2）
申请年 2011（2）  2012（2） 
专利权人 EMPIRE TECHN.（2）

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z

Partially altering defect area in a layer on substrate involves reacting substrate under reaction conditions to produce cationic area in exposed areas; adhering graphene oxide to cationic area to produce graphene oxide layer; and reducing.

MILLER S, YAGER T, MILLER S A, YAGER T A

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Composition useful for producing photovoltaic device and nanostructure assembly of graphene quantum dots, and for producing soluble graphene quantum dot, comprises a population of graphene quantum dots.

LI L, XIN Y, YAN X

Manufacture of graphene/silicon carbide composite material for electronic component e.g. semiconductor, involves removing oxide film from surface of silicon carbide single crystal substrate, exposing and heating.

KUSUNOKI M, NORIMATSU W