国家/地区 韩国（15） 美国（15） 世界知识产权组织（13） 中国（9） 日本（9） 欧洲专利局（EPO）（8） 俄罗斯（3） 印度（2） 墨西哥（2）
IPC部 B（30）
IPC大类 B82（30） C01（30） H01（13）
C08（6） B32（5） B01（4）
C07（4） B02（2） B05（2）
B29（2） C03（2） C23（2）
G02（2）
IPC小类 B82B（30）
IPC B82B003/00（30）
发明人 BEGIN D（2） CHOE P Y（2） CHOI B（2）
CHOI B L（2） ERSEN O（2） HWANG T M（2）
I E K（2） JANOWSKA I（2） KIM B（2）
KIM B S（2） KIM H（2） KIM H K（2）
KIM P S（2） LEDOUX M（2） LEE E（2）
公开年 2011（19） 2012（7） 2010（4）
申请年 2010（30）
专利权人 SAMSUNG ELEC.（3） UNIV SUNGKYU.（3） CENT NAT REC.（2） NECHAEV YU S（2）
UNIV STRASBO.（2）

Obtaining and splitting poly-layer graphane (polygraphane) comprises loosely connecting graphane layers, and using carbon material source loosely coupled graphene layers (printing), which differs from known methods for producing graphane.

NECHAEV YU S

Ramified graphene-carbon nanotube composite material comprises ramified graphene and carbon nanotube forming communicate network structure through intermixing and interveining.

ZHOU M, WU F, WANG Y

Preparing graphene/nano-titanium dioxide composites, comprises dispersing nano-titanium dioxides and graphenes in water/ethanol solution and allowing nano-titanium dioxides and graphenes within dispersion to react at specified conditions.

LIN Y, TSENG S, LIN J, LEE S, LIN R J, LI X Y, LIN Y J, ZENG S M, TSENG S M, LEE S Y

Preparing porous graphene film, which is used e.g. in electronic device, comprises mixing graphene oxide and solvent to form mixture, applying the mixture to surface of substrate, and cooling the surface of substrate to form water droplets.

CHEN X, YIN S, BOEY Y C, MA J

Patterning method of graphene used in graphene device, involves processing ring element of graphene oxide for patternizing laser irradiated in phase, during rising condition.

CHOI K S, KIM S Y, KWON G C, PARK Y S

Production of high-compact hydrogen involves carrying out polylayer hydrogen intercalation between graphene layers containing layered carbon nanomaterial having crystalline nano-fragments of graphene layers containing graphite nanofibers.

NECHAEV YU S

Manufacture of graphene involves pre-processing graphite, oxidizing the pre-processed graphite using acid solution, removing oxidized graphene, and reducing oxidized graphene using reducing agent.

CHU G J, CHUNG C K, KIM H S, KIM M C, LEE J B, SHIN H C, TAE S J

Cross-type graphene hetero-junction structure is formed by attaching primary graphene on substrate, coating polymethyl methacrylate to graphene, baking, separating polymethyl methacrylate layer, and aligning layer on secondary graphene.

LEE S W, KIM J S

Method for forming graphene pattern, involves forming pattern on master board, forming metal layer on imprint stamp, forming graphene on metal layer, transferring graphene on substrate, and forming graphene pattern using imprinting method.

PARK H H, YOO S H, KANG H K, LEE J G, KO C G, JUNG S H, SHIN H B, SONG H Y, JANG M C

Composition, useful in e.g. high speed transistors, electronic devices, sensors, solar cells, optoelectronic devices, logic devices, ultra capacitors, and actuators, comprises unaffixed graphene particulates.

BERRY V, MOHANTY N, MOORE D S