国家/地区 韩国（4）
IPC部 B（4）
IPC大类 B82（4） C01（4） H01（4）
G11（2）
IPC小类 B82Y（4）
IPC B82Y010/00（4）
发明人
公开年 2012（3）
申请年 2012（4）
专利权人 SAMSUNG ELEC.（2）

Memory cell switch for reversibly opening and closing circuit, has ferroelectric material formed between graphene structure and conductive structure, where conductive structure provides switch into on and off states.

SANDHU G S, SANDHU G

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Ferromagnetic graphene for spin valve device, comprises ferromagnetic graphene having ferromagnetic characteristics and antidote(s) in ferromagnetic graphene.

LEE S, LEE S H

Fabricating graphene thin film involves making graphene by reducing graphene oxide using sulfonyl hydrazide-based reducing agent, forming graphene dispersed solution by dispersing graphene into organic solvent, and applying solution to film.

NA S I, KIM D Y, KOO H Y, YUN J M, YEO J S, KIM J K