国家/地区 中国（4）
IPC部 B（4）
IPC大类 B82（4） C01（4） H01（4）
IPC小类 B82Y（4）
IPC B82Y099/00（4）
发明人
公开年 2012（3）
申请年 2012（4）
专利权人

Memory cell switch for reversibly opening and closing circuit, has ferroelectric material formed between graphene structure and conductive structure, where conductive structure provides switch into on and off states.

SANDHU G S, SANDHU G

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Graphene comprising a hole, useful e.g. for coating an electrode and an active material which are useful in a power storage device and an electric appliance e.g. a display device, a lighting device and a desktop personal computer.

HIROHASHI T, ADACHI S

Making graphene on diamond substrate, comprises applying metal layer to crystallographic face of diamond substrate, and heating diamond substrate under vacuum to convert portion of diamond substrate at crystallographic face into graphene.

SUNG C, SONG J