国家/地区 韩国（6） 美国（2）
IPC部 C（6）
IPC大类 C01（6） B82（2） C23（2）
IPC小类 C01B（6）
IPC C01B031/02（6）
发明人 PARK S（6）
公开年 2014（3） 2015（3）
申请年 2013（6）
专利权人 LG ELECTRONI.（3） PARK S（2） UNIV SEOUL N.（2）

Graphene film comprises substrate, graphene layer provided on substrate, and charge transport layer comprising nanowires provided between substrate and graphene layer.

MOON J, HONG B, PARK S, JUNG M, CHOI M

Doping graphene, comprises preparing dispersed solution of the molecules having molecular structure linearly connected with two aromatic rings, applying the obtained solution on graphene, and drying the solution.

MOON J, HONG B, PARK S, JUNG M, CHOI M

Producing reduced graphene oxide, comprises preparing graphene oxide dispersion solution, and refluxing prepared dispersion solution.

PARK S, PARK G T

Manufacture of graphene for fabricating electronic device and display device, involves forming silicon carbide thin film on substrate, forming metal thin film on silicon carbide thin film, and heating to obtain metal composite layer.

LEE D W, SHIN H, PARK S, BYUN K, SEO D, SONG H, WOO Y, LEE J, CHUNG H, HEO J, SHIN H J, PARK S J, BYUN K E, SONG H J, WOO Y S, LEE J H, CHUNG H J, HEO J S

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J

Patterning graphene with DNA structure, comprises forming DNA pattern and forming graphene on DNA pattern.

GYU P I, HA P S, HAN N Y, HONG P J, MO Y S, TAEK L J, WON J S, JEONG S, LEE J, PARK I K, PARK J H, PARK S, ROH Y, YEON S