国家/地区 韩国（7） 中国（3） 美国（3） 世界知识产权组织（2）
IPC部 C（7） B（2）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B031/02（7）
发明人 JUNG M（7） MOON J（6） CHOI M（3）
RHO J（3） SEO B（3） HONG B（2）
KIM T（2） KIM T H（2） PARK S（2）
PARK W（2）
公开年 2013（3） 2014（3）
申请年 2012（3）  2013（2）  2014（2） 
专利权人 LG ELECTRONICS INC（7）

Doping graphene, comprises preparing dispersed solution of the molecules having molecular structure linearly connected with two aromatic rings, applying the obtained solution on graphene, and drying the solution.

MOON J, HONG B, PARK S, JUNG M, CHOI M

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J

MManufacturing three-dimensional structure of graphene useful in flexible display, comprises preparing mold, forming graphene layer on mold, forming support structure for covering first and second sides on graphene layer, and removing mold.

LEE S, BYUN N, JUNG M, LEE D, SEO B

Manufacture of graphene involves coating graphene oxide solution on substrate, drying coated graphene oxide solution on substrate, forming graphene oxide flakes, and growing graphene.

RHO J, PARK W, JUNG M, SEO B, MOON J

Method for doping graphene layer for doped graphene film, involves forming catalytic metal layer on graphene layer, placing dopants on substrate, removing metal layer, providing graphene layer on substrate, and removing support layer.

JUNG M, RHO J, SEO B, MOON J