国家/地区 日本（5）
IPC部 C（5） H（3） B（2）
IPC大类 C01（5） H01（3） B82（2）
C07（2）
IPC小类 C01B（5）
IPC C01B032/184（5）
发明人
公开年 2022（3） 2023（2）
申请年 2022（5）
专利权人

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Producing graphene material used in graphene electrode for electric double layer capacitor, by preparing graphene oxide, heat-treating graphene oxide, dispersing heat-treated graphene oxide in dispersion medium, and hydrothermally treating thermally reduced graphene oxide dispersion.

JIE T, SHIQI L, KUN Z, YUKINORI H, YORISHIGE M, TANG J, LIN S Q, ZHANG K, HATO Y, MATSUBA Y

Production of substituted anthracene compound used as precursor for producing graphene nanoribbons, involves converting amino group and hydrogen atom bonded to carbon atom of anthracene-1,4,5,8-tetramine compound.

YAMAGUCHI J

New graphene nanoribbon used for semiconductor, solar cell, transparent electrode, high-speed transistor and organic electroluminescent device.

ITAMI K, ITO H, MATSUSHIMA K, NAKATSUJI H, UENO R, ISHIDA S, OKUDA S

Weakly coupled enhanced graphene film for use in graphene photoelectric device, comprises an enhanced graphene structure based on weak coupling, where the enhanced graphene structure based on weak coupling comprises many graphene units stacked vertically; the graphene unit is a single graphene sheet.

LIU Y, FANG W, LI L, PENG L, GAO C, GOO C, FENG L, WEE D