国家/地区 中国（4） 美国（2）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B032/184（7）
发明人
公开年 2020（7）
申请年 2020（4）  2018（2） 
专利权人

Preparing graphene involves etching the carbon alloy with etching solution to remove non-carbon elements in the carbon-containing alloy to obtain graphene, etching solution includes one to three of hydrochloric acid, sulfuric acid.

ZHONG L, WANG X, XU L, ZHANG Q, ZHOU Y, LIU H, WANG Y

Preparing nitrogen-doped graphene-copper complex heat dissipation film comprises e.g. ball milling graphene oxide, nitrogen dopant and molecular bridging agent, heat treatment, mixing nitrogen-doped graphene and binder dispersion.

CHENG W, LI L, MU F

Metal and carbon-based material containing electrode surface graphene coating comprises sol precursor, solvent and graphene powder.

ZHANG Y, REN Y, ZHANG X, JIANG Y, ZHOU T

Preparing cerium oxide nanorod array/graphene composite material for photocathode protection, involves using conductive substrate as substrate, cerium salt solution as electrolyte and potassium chloride as auxiliary electrolyte.

YAO C, ZUO S, YAN X, LI X, LIU W, WANG C, YE L, WU H

Synthesizing pristine graphene quantum dots comprises e.g. providing catalyst having e.g. metal alloy or metal hydroxide loaded substrate in reactor, and passing hydrocarbon carrier gas of e.g. methane over catalyst loaded substrate.

RAMAPRABHU S, MEENAKSHI S G, AJAY P V K S

Forming graphene layer for e.g., LEDs, by mixing carbon source with horizontally oriented molten solvent, precipitating carbon source to form graphite layer across molten solvent, and separating graphite layer into a set of graphene layers.

SUNG C, HU S C, LIN I, YU C

Synthesizing graphene pattern by physically adhering catalyst block including catalyst material to portion of growth substrate, and forming graphene thin film selectively at interface between catalyst block and growth substrate.

PARK J, SIM Y, KIM J, SIM Y M, PARKJAEHYUN