国家/地区 韩国（4） 美国（4） 欧洲专利局（EPO）（3） 日本（3） 世界知识产权组织（3） 中国（2）
IPC部 B（4） C（4） H（2）
IPC大类 B82（4） C01（4） C23（2）
H01（2）
IPC小类 B82Y（4）
IPC B82Y030/00（4）
发明人
公开年 2011（4）
申请年 2010（2）  2011（2） 
专利权人

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O

Manufacture of graphene fiber used for e.g. coaxial cable, involves forming linear pattern on substrate having metal layer, reacting linear pattern having metal layer with reactive gas, and impregnating substrate with linear pattern.

BAE S K, HONG B H, KIM H K, KIM K S, HUI H B, SU K G, GEUN K H, GANG B S

Composition, useful in electrode, which is useful in display device comprising e.g. organic light emitting display device, and in solar cell, comprises graphene and dopant comprising an organic dopant and/or inorganic dopant.

SHIN H, CHOI W, CHOI J, YOON S, SHIN H J, CHOI W M, CHOI J Y, YOON S M

Producing graphene, comprises introducing a solution of a metal alkoxide in a solvent into a decomposition apparatus, which includes a first region having a high temperature to cause thermal decomposition of the metal alkoxide.

COLEMAN K S