国家/地区 日本（5）
IPC部 C（5） B（3） H（2）
IPC大类 C01（5） B82（2） C07（2）
H01（2）
IPC小类 C01B（5）
IPC C01B032/184（5）
发明人
公开年 2022（5）
申请年 2022（3）  2021（2） 
专利权人

Metal catalyst layer used for producing graphene, laminated and crystallized on c-plane of substrate having corundum structure, having face-centered cubic structure.

NARUTSUKA S, NAKAJIMA R

Production of substituted anthracene compound used as precursor for producing graphene nanoribbons, involves converting amino group and hydrogen atom bonded to carbon atom of anthracene-1,4,5,8-tetramine compound.

YAMAGUCHI J

New graphene nanoribbon used for semiconductor, solar cell, transparent electrode, high-speed transistor and organic electroluminescent device.

ITAMI K, ITO H, MATSUSHIMA K, NAKATSUJI H, UENO R, ISHIDA S, OKUDA S

Weakly coupled enhanced graphene film for use in graphene photoelectric device, comprises an enhanced graphene structure based on weak coupling, where the enhanced graphene structure based on weak coupling comprises many graphene units stacked vertically; the graphene unit is a single graphene sheet.

LIU Y, FANG W, LI L, PENG L, GAO C, GOO C, FENG L, WEE D

Semiconductor device, such as ffield effect transistors (FET), comprises gate electrode arranged on graphene film between source electrode and drain electrode with gate insulator film interposed between gate electrode and graphene film.

MITSUHASHI F, TATENO Y