国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B032/186（5）
发明人 ZHANG M（5）
公开年 2015（2） 2017（2）
申请年 2015（5）
专利权人 SHANGHAI INS.（4）

Preparation of continuous single layer graphene on insulating substrate by providing insulating substrate, depositing germanium film on insulating substrate, using germanium film as catalyst and growing graphene at high temperature.

DI Z, WANG Z, DAI J, WANG G, ZHENG X, XUE Z, ZHANG M, WANG X

Preparation of patterned graphene involves providing insulating substrate, depositing germanium film on insulating substrate, etching desired pattern in germanium film, forming patterned germanium film, and continuously evaporating.

DI Z, WANG Z, DAI J, WANG G, ZHENG X, XUE Z, ZHANG M, WANG X

Preparing graphene loaded carbon nanobelt array three-dimensional composite material comprises e.g. taking iron(III) nitrate nonahydrate and nickel nitrate hexahydrate, preparing nitrate solution, stirring, drying, washing and drying.

HE C, LI J, LIU E, SHI C, ZHANG M, ZHAO N

Preparing graphene on insulator by placing germanium catalyst substrate in growth chamber, introducing hydrogenous atmosphere to form germanium-hydrogen bond, heating substrate, and performing microwave treatment.

DI Z, JIA P, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J

Preparation of textured graphite for, e.g. sensor, involves placing catalytic substrate in growth chamber, introducing carbon source, heating to grow graphene, and cooling in non-oxidizing protective atmosphere to form graphene surface.

DI Z, WANG G, SHI X, XUE Z, ZHANG M, ZHENG X, DAI J