国家/地区 中国（6） 世界知识产权组织（2）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B032/186（6）
发明人 LIN J（6）
公开年 2017（2） 2023（2）
申请年 2023（2） 
专利权人 SHENZHEN YAH.（2） XIAMEN KNANO.（2）

High-quality graphene powder growth and synchronous hydrogen production method, involves generating cracking reaction in liquid metal by carbon source gas, and collecting graphene bubble rising to surface of liquid metal and exhaust gas to purify exhaust gas to obtain hydrogen.

FANG C, LIN J, HUANG W, HONG J

Reaction device for growing of graphene used in technical field of carbon material, comprises crucible covers cooperate with crucible in which first air outlet pipe and second ventilation assembly extend into crucible cavity of crucible.

LIN J, FANG C, HUANG W, HONG J

Preparing silicon based substrate heterogeneous integrated graphene, comprises e.g. providing silicon based substrate, then forming dielectric layer on surface of the silicon based substrate, depositing graphene film and etching.

OU X, YI A, LIN J, ZHANG S, YU Q, XIE X

Preparing graphene heat conducting silicone pad involves taking metal foil, growing single layer graphene film by using chemical vapor deposition method on surface of metal foil to obtain graphene film/metal foil.

YE E, LIN J, HUANG Y, JIAO W, ZHANG X, CHEN W

Method for transferring non-planar irregular structural graphene film involves depositing graphene film and silica gel layer on metal substrate, adhering resultant product with irregular structure, and separating graphene film.

YE E, CHEN W, HUANG Y, LIN J, JIAO W, ZHANG X, KUANG Y

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K