国家/地区 中国（3）
IPC部 B（3）
IPC大类 B82（3）
IPC小类 B82Y（3）
IPC B82Y040/00（3）
发明人
公开年
申请年
专利权人

Synthesis of nano silicon carbide at low temperature used in electric field emission application, involves heat treating clean rice hull in air atmosphere, mixing obtained heat-treated product with mixed salt, magnesium powder, and heat treating in inert atmosphere.

MAO A, FANG D, LIU W, YANG M, YANG X, ZHENG C

Large-scale preparation of silicon carbide nanowire used for, e.g. electronics by preparing spongy graphene or its derivative, mixing silica powder with silicon powder, adding layer of graphite paper, adding spongy graphene and calcining.

ZHUO D, CHEN S, WU L, QU B, WANG R

Two-dimensional silicon carbide ultra-thin nano structure for e.g. microelectronic devices, is prepared by adding silicon powder and graphene, with dopant, and reacting in mixed molten salt medium of sodium chloride and sodium fluoride.

HUANG J, ZHANG M, HU Z, FENG Z, YAN M, LI X, LIU M