国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4） C23（4）
IPC小类 C01B（4）
IPC C23C014/58（4）
发明人
公开年 2021（3）
申请年 2021（4）
专利权人

Preparation of graphene/metal film composite material for cycloaddition reaction, involves using electron beam evaporation method, preparing metal film on silicon plate, utilizing polymethyl methacrylate transfer method, and transferring graphene to surface of metal film.

ZHENG X, LIU W, YU X, YU Y, LIU J, YANG X

Preparation of ordered chiral molecular chain on substrate used as device substrate, involves heating single crystal substrate, forming double-layer graphene on substrate, placing substrate in chamber, thermally-evaporating 2,2'-diphenylethynyl-4,4'-dibromobiphenyl molecule and depositing molecules.

PI X, WANG H, LU H

Directly growing graphene thin film on surface of non-metallic substrate, involves depositing aluminum oxide film on surface of substrate, evaporating copper film on surface of substrate deposited with aluminum oxide film, annealing and growing graphene by chemical vapor deposition.

LOU G, OUYANG Y, WANG W, LIU Z

Graphene-modified silicon integrated energy storage film has graphene layer that is arranged on surface of silicon substrate, and energy storage film layer that is arranged on surface of graphene layer.

LIU M, JIN L