国家/地区 欧洲专利局（EPO）（3）
IPC部 B（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C23C014/58（3）
发明人
公开年
申请年
专利权人

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Synthesizing graphene sheet on platinum silicide, by forming stack by e.g. placing first layer of diffusion barrier material on substrate and placing second layer of silicon carbonaceous material on first layer and thermally treating stack.

ZENASNI A

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C